FDP13AN06A0 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDP13AN06A0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 62 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 96 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO-220AB
FDP13AN06A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDP13AN06A0 Datasheet (PDF)
fdb13an06a0 fdp13an06a0.pdf
July 2003FDB13AN06A0 / FDP13AN06A0N-Channel PowerTrench MOSFET60V, 62A, 13.5mFeatures Applications rDS(ON) = 11.5m (Typ.), VGS = 10V, ID = 62A Motor / Body Load Control Qg(tot) = 22nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse
fdp13an06a0.pdf
July 2003FDB13AN06A0 / FDP13AN06A0N-Channel PowerTrench MOSFET60V, 62A, 13.5mFeatures Applications rDS(ON) = 11.5m (Typ.), VGS = 10V, ID = 62A Motor / Body Load Control Qg(tot) = 22nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse
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September 2007UniFETTMFDP13N50F / FDPF13N50FTtmN-Channel MOSFET 500V, 12A, 0.54Features Description RDS(on) = 0.42 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC)stripe, DMOS technology. Low Crss ( Typ. 14.5pF)This advanced technol
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: OSG65R380DEF
