All MOSFET. FDP8N50NZU Datasheet

 

FDP8N50NZU Datasheet and Replacement


   Type Designator: FDP8N50NZU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

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FDP8N50NZU Datasheet (PDF)

 ..1. Size:677K  fairchild semi
 fdp8n50nzu fdpf8n50nzu.pdf pdf_icon

FDP8N50NZU

February 2010UniFET-IITMFDP8N50NZU / FDPF8N50NZUtmN-Channel MOSFET500V, 6.5A, 1.2Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance t echnology

 ..2. Size:564K  fairchild semi
 fdp8n50nzu.pdf pdf_icon

FDP8N50NZU

February 2010UniFET-IITMFDP8N50NZU / FDPF8N50NZUtmN-Channel MOSFET500V, 6.5A, 1.2Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance t echnology

 5.1. Size:719K  fairchild semi
 fdp8n50nz fdpf8n50nzt.pdf pdf_icon

FDP8N50NZU

October 2009UniFETTMFDP8N50NZ / FDPF8N50NZTN-Channel MOSFET 500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been

 5.2. Size:245K  fairchild semi
 fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf pdf_icon

FDP8N50NZU

March 2010UniFETTMFDP8N50NZ / FDPF8N50NZtmN-Channel MOSFET500V, 8A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistorsare produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been es

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Datasheet: FDP5645 , FDP5N50 , FDP75N08 , FDP79N15 , FDP8441F085 , FDP8442 , FDP8443 , FDP8878 , IRF1010E , FDPC5018SG , FDPC5030SG , FDPF12N35 , FDPF12N50NZT , FDPF14N30T , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T .

History: INK0010AC1 | HFP18N50U | INJ0002AC1 | INK0001BC1 | QS6J11 | AP9469GM | INJ0002AM1

Keywords - FDP8N50NZU MOSFET datasheet

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