FDP8N50NZU Specs and Replacement

Type Designator: FDP8N50NZU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

FDP8N50NZU substitution

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FDP8N50NZU datasheet

 ..1. Size:677K  fairchild semi
 fdp8n50nzu fdpf8n50nzu.pdf pdf_icon

FDP8N50NZU

February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology... See More ⇒

 ..2. Size:564K  fairchild semi
 fdp8n50nzu.pdf pdf_icon

FDP8N50NZU

February 2010 UniFET-IITM FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description RDS(on) = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance t echnology... See More ⇒

 5.1. Size:719K  fairchild semi
 fdp8n50nz fdpf8n50nzt.pdf pdf_icon

FDP8N50NZU

October 2009 UniFETTM FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been ... See More ⇒

 5.2. Size:245K  fairchild semi
 fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf pdf_icon

FDP8N50NZU

March 2010 UniFETTM FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been es... See More ⇒

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Detailed specifications: FDP5645, FDP5N50, FDP75N08, FDP79N15, FDP8441F085, FDP8442, FDP8443, FDP8878, IRF1010E, FDPC5018SG, FDPC5030SG, FDPF12N35, FDPF12N50NZT, FDPF14N30T, FDPF15N65YDTU, FDPF18N20F, FDPF52N20T

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