FDR840P PDF and Equivalents Search

 

FDR840P PDF Specs and Replacement


   Type Designator: FDR840P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1532 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SSOT-8
 

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FDR840P PDF Specs

 ..1. Size:222K  fairchild semi
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FDR840P

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 9.1. Size:87K  fairchild semi
 fdr844p.pdf pdf_icon

FDR840P

October 2001 FDR844P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 10 A, 20 V. RDS(ON) = 11 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 14 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 20 m @VGS = ... See More ⇒

 9.2. Size:139K  fairchild semi
 fdr842p.pdf pdf_icon

FDR840P

December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 11 A, 12 V RDS(ON) = 9 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 12 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 16 m @ VG... See More ⇒

Detailed specifications: FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 , FDR6674A , 2SK3568 , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 , FDS3170N7 , FDS3612 .

History: APT8M100S | APQ11BSN40A

Keywords - FDR840P MOSFET specs

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