FDS2170N3 Specs and Replacement

Type Designator: FDS2170N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.128 Ohm

Package: SO-8

FDS2170N3 substitution

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FDS2170N3 datasheet

 ..1. Size:180K  fairchild semi
 fds2170n3.pdf pdf_icon

FDS2170N3

January 2004 FDS2170N3 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 128 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optimized fo... See More ⇒

 6.1. Size:186K  fairchild semi
 fds2170n7.pdf pdf_icon

FDS2170N3

December 2003 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 200 V. RDS(ON) = 128 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been... See More ⇒

Detailed specifications: FDPF8N50NZT, FDR6580, FDR6674A, FDR840P, FDR842P, FDR844P, FDS2070N3, FDS2070N7, AO3407, FDS2170N7, FDS3170N7, FDS3612, FDS3670, FDS3680, FDS3682, FDS4070N3, FDS4070N7

Keywords - FDS2170N3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.