All MOSFET. FDS3170N7 Datasheet

 

FDS3170N7 Datasheet and Replacement


   Type Designator: FDS3170N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 171 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO-8
 

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FDS3170N7 Datasheet (PDF)

 ..1. Size:206K  fairchild semi
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FDS3170N7

May 2003 FDS3170N7 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.7 A, 100 V. RDS(ON) = 26 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High p

Datasheet: FDR6674A , FDR840P , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 , FDS2170N3 , FDS2170N7 , 2N60 , FDS3612 , FDS3670 , FDS3680 , FDS3682 , FDS4070N3 , FDS4070N7 , FDS4072N3 , FDS4072N7 .

History: P1203EVG

Keywords - FDS3170N7 MOSFET datasheet

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