FDS3170N7 Specs and Replacement

Type Designator: FDS3170N7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 171 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SO-8

FDS3170N7 substitution

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FDS3170N7 datasheet

 ..1. Size:206K  fairchild semi
 fds3170n7.pdf pdf_icon

FDS3170N7

May 2003 FDS3170N7 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.7 A, 100 V. RDS(ON) = 26 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High p... See More ⇒

Detailed specifications: FDR6674A, FDR840P, FDR842P, FDR844P, FDS2070N3, FDS2070N7, FDS2170N3, FDS2170N7, 20N50, FDS3612, FDS3670, FDS3680, FDS3682, FDS4070N3, FDS4070N7, FDS4072N3, FDS4072N7

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