FDS3670 Datasheet and Replacement

January 2000PRELIMINARYFDS3670100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.033 @ VGS = 6 V.converters using either synchronous or conventionalswitching PWM controllers. Low gate charge (57 nC typ

March 2003FDS3672N-Channel PowerTrench MOSFET100V, 7.5A, 22mFeatures Applications rDS(ON) = 19m (Typ.), VGS = 10V, ID = 7.5A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS3672www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8