FDS3670 - описание и поиск аналогов

January 2000 PRELIMINARY FDS3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.3 A, 100 V. RDS(ON) = 0.030 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.033 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Low gate charge (57 nC typ

March 2003 FDS3672 N-Channel PowerTrench MOSFET 100V, 7.5A, 22m Features Applications rDS(ON) = 19m (Typ.), VGS = 10V, ID = 7.5A DC/DC converters and Off-Line UPS Qg(tot) = 28nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS3672 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO-8