FDS7060N7 Specs and Replacement

Type Designator: FDS7060N7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 721 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: SO-8

FDS7060N7 substitution

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FDS7060N7 datasheet

 ..1. Size:211K  fairchild semi
fds7060n7.pdf pdf_icon

FDS7060N7

May 2003 FDS7060N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 19 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High perfor... See More ⇒

 8.1. Size:169K  fairchild semi
fds7064n.pdf pdf_icon

FDS7060N7

January 2004 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 16 A, 30 V RDS(ON) = 7.5 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has been optim... See More ⇒

 8.2. Size:169K  fairchild semi
fds7066n3.pdf pdf_icon

FDS7060N7

February 2004 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hig... See More ⇒

 8.3. Size:132K  fairchild semi
fds7066asn3.pdf pdf_icon

FDS7060N7

August 2004 FDS7066ASN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066ASN3 is designed to replace a single SO- 19 A, 30 V RDS(ON) = 4.8 m @ VGS = 10 V 8 FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 6.0 m @ VGS = 4.5 V DC DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a ... See More ⇒

Detailed specifications: FDS6673AZ, FDS6675A, FDS6679Z, FDS6680S, FDS6688, FDS6688AS, FDS6688S, FDS6694, IRF740, FDS7064N, FDS7064N7, FDS7064SN3, FDS7066ASN3, FDS7066N3, FDS7066N7, FDS7079ZN3, FDS7082N3

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