All MOSFET. FDS7088N7 Datasheet

 

FDS7088N7 Datasheet and Replacement


   Type Designator: FDS7088N7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: SO-8
 

 FDS7088N7 substitution

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FDS7088N7 Datasheet (PDF)

 ..1. Size:177K  fairchild semi
fds7088n7.pdf pdf_icon

FDS7088N7

February 2004 FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

 6.1. Size:169K  fairchild semi
fds7088n3.pdf pdf_icon

FDS7088N7

February 2004 FDS7088N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe

 7.1. Size:188K  fairchild semi
fds7088sn3.pdf pdf_icon

FDS7088N7

August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 4.9 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

 8.1. Size:172K  fairchild semi
fds7082n3.pdf pdf_icon

FDS7088N7

February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced 17.5 A, 30 V RDS(ON) = 6 m @ VGS = 10 V SO8 FLMP package has been designed specifically to RDS(ON) = 8 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for

Datasheet: FDS7064N7 , FDS7064SN3 , FDS7066ASN3 , FDS7066N3 , FDS7066N7 , FDS7079ZN3 , FDS7082N3 , FDS7088N3 , IRFP260N , FDS7088SN3 , FDS7096N3 , FDS7098N3 , FDS7288N3 , FDS7296N3 , FDS7760A , FDS7764S , FDS7779Z .

History: AO3452 | AP02N90J-HF | IXTF1N450 | HFD5N40 | NCE60NF160T | PT530BA | GSM8471

Keywords - FDS7088N7 MOSFET datasheet

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