FDS7088N7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS7088N7
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 23 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 48 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 930 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
Тип корпуса: SO-8
FDS7088N7 Datasheet (PDF)
fds7088n7.pdf
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February 2004 FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe
fds7088n3.pdf
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February 2004 FDS7088N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe
fds7088sn3.pdf
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August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 4.9 m @ VGS = 4.5 V DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
fds7082n3.pdf
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February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced 17.5 A, 30 V RDS(ON) = 6 m @ VGS = 10 V SO8 FLMP package has been designed specifically to RDS(ON) = 8 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for
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