FDS7296N3 Datasheet and Replacement
Type Designator: FDS7296N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12.7 nC
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SO-8
FDS7296N3 substitution
FDS7296N3 Datasheet (PDF)
fds7296n3.pdf

September 2004FDS7296N330V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET in the thermally enhanced 15 A, 30 V RDS(ON) = 8 m @ VGS = 10 VSO8 FLMP package has been designed specifically toRDS(ON) = 11 m @ VGS = 4.5 Vimprove the overall efficiency of DC/DC converters.Providing a balance of low RDS(ON) and Qg it is ideal f
fds7288n3.pdf

February 2004 FDS7288N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced 20.5 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V SO8 FLMP package has been designed specifically to RDS(ON) = 5.6 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRF9332 | SSF60R075SFD2
Keywords - FDS7296N3 MOSFET datasheet
FDS7296N3 cross reference
FDS7296N3 equivalent finder
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History: IRF9332 | SSF60R075SFD2



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