FDS7788 Specs and Replacement
Type Designator: FDS7788
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 930 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SO-8
FDS7788 substitution
- MOSFET ⓘ Cross-Reference Search
FDS7788 datasheet
fds7760a.pdf
January 2002 FDS7760A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 8 m @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Low gate... See More ⇒
fds7779z.pdf
October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery charge... See More ⇒
fds7764s.pdf
September 2002 FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 9.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, provi... See More ⇒
Detailed specifications: FDS7088SN3, FDS7096N3, FDS7098N3, FDS7288N3, FDS7296N3, FDS7760A, FDS7764S, FDS7779Z, IRFB4115, FDS8670, FDS8812NZ, FDS8874, FDS9412A, FDT3N40TF, FDT461N, FDT55AN06LA0, FDU044AN03L
Keywords - FDS7788 MOSFET specs
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