August 2008FDS778830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 18 A, 30 V. RDS(ON) = 4.0 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 5.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge

January 2002 FDS7760A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 8 m @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Low gate

October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery charge

September 2002 FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 9.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, provi