FDU8580 Datasheet and Replacement
Type Designator: FDU8580
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 49.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-251AA
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FDU8580 Datasheet (PDF)
fdd8580 fdu8580.pdf

July 2006FDD8580/FDU8580tmN-Channel PowerTrench MOSFET 20V, 35A, 9mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35Ato improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has been opti
fdd8586 fdu8586.pdf

January 2007FDD8586/FDU8586tmN-Channel PowerTrench MOSFET 20V, 35A, 5.5mFeatures General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It h
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSFP | FCPF7N60YDTU
Keywords - FDU8580 MOSFET datasheet
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History: SM6A12NSFP | FCPF7N60YDTU



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