FDU8796
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDU8796
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 88
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 37
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 455
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057
Ohm
Package:
TO-251AA
FDU8796
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDU8796
Datasheet (PDF)
..1. Size:306K fairchild semi
fdu8796 fdu8796 f071.pdf 
March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
..2. Size:308K fairchild semi
fdd8796 fdu8796.pdf
March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.1. Size:356K fairchild semi
fdu8778.pdf
May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has
9.2. Size:395K fairchild semi
fdu8782.pdf
November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.3. Size:418K fairchild semi
fdd8782 fdu8782.pdf
November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.4. Size:308K fairchild semi
fdu8770 fdu8770 f071.pdf
March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee
9.5. Size:312K fairchild semi
fdu8780 fdu8780 f071.pdf
March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.6. Size:310K fairchild semi
fdd8770 fdu8770.pdf
March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee
9.7. Size:314K fairchild semi
fdd8780 fdu8780.pdf
March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
9.8. Size:358K fairchild semi
fdd8778 fdu8778.pdf
May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has
Datasheet: WPB4002
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