FDU8796. Аналоги и основные параметры

Наименование производителя: FDU8796

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 88 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 24 ns

Cossⓘ - Выходная емкость: 455 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm

Тип корпуса: TO-251AA

Аналог (замена) для FDU8796

- подборⓘ MOSFET транзистора по параметрам

 

FDU8796 даташит

 ..1. Size:306K  fairchild semi
 fdu8796 fdu8796 f071.pdf pdf_icon

FDU8796

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

 ..2. Size:308K  fairchild semi
 fdd8796 fdu8796.pdf pdf_icon

FDU8796

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

 9.1. Size:356K  fairchild semi
 fdu8778.pdf pdf_icon

FDU8796

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has

 9.2. Size:395K  fairchild semi
 fdu8782.pdf pdf_icon

FDU8796

November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FDU8580, FDU8586, FDU8770, FDU8770F071, FDU8778, FDU8780, FDU8780F071, FDU8782, NCEP15T14, FDU8796F071, FDU8870, FDU8874, FDU8876, FDU8878, FDU8880, FDU8882, FDU8896