All MOSFET. FDU8882 Datasheet

 

FDU8882 Datasheet and Replacement


   Type Designator: FDU8882
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO-251AA
 

 FDU8882 substitution

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FDU8882 Datasheet (PDF)

 ..1. Size:429K  fairchild semi
 fdd8882 fdu8882 fdu8882.pdf pdf_icon

FDU8882

2April 2008FDD8882 / FDU8882tmN-Channel PowerTrench MOSFET30V, 55A, 11.5mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 15m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.1. Size:435K  fairchild semi
 fdu8880.pdf pdf_icon

FDU8882

May 2008FDU8880 tmN-Channel PowerTrench MOSFET30V, 58A, 10mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 13m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized for low

 9.1. Size:567K  fairchild semi
 fdd8896 fdu8896.pdf pdf_icon

FDU8882

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 9.2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDU8882

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

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Datasheet: FDU8782 , FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , FDU8878 , FDU8880 , 10N65 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 .

History: SVG103R0NS6TR | TSM2318CX | FQD7N20TM | IXTI10N60P | SLP5N65S | 5N65L-TF3T-T | PDK6912

Keywords - FDU8882 MOSFET datasheet

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