FDU8882. Аналоги и основные параметры
Наименование производителя: FDU8882
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 82 ns
Cossⓘ - Выходная емкость: 240 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
Тип корпуса: TO-251AA
Аналог (замена) для FDU8882
- подборⓘ MOSFET транзистора по параметрам
FDU8882 даташит
..1. Size:429K fairchild semi
fdd8882 fdu8882 fdu8882.pdf 
2 April 2008 FDD8882 / FDU8882 tm N-Channel PowerTrench MOSFET 30V, 55A, 11.5m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 15m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op
8.1. Size:435K fairchild semi
fdu8880.pdf 
May 2008 FDU8880 tm N-Channel PowerTrench MOSFET 30V, 58A, 10m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 10m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 13m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low
9.1. Size:567K fairchild semi
fdd8896 fdu8896.pdf 
April 2008 FDD8896 / FDU8896 tm N-Channel PowerTrench MOSFET 30V, 94A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been opt
9.2. Size:486K fairchild semi
fdd8870 fdu8870.pdf 
April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op
9.3. Size:503K fairchild semi
fdu8874.pdf 
o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been
9.4. Size:434K fairchild semi
fdu8896.pdf 
April 2008 FDD8896 / FDU8896 tm N-Channel PowerTrench MOSFET 30V, 94A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been opt
9.5. Size:659K fairchild semi
fdd8874 fdu8874.pdf 
o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been
9.6. Size:430K fairchild semi
fdu8870.pdf 
April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op
9.7. Size:400K fairchild semi
fdd8878 fdu8878 fdu8878.pdf 
0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim
9.8. Size:468K fairchild semi
fdd8876 fdu8876 fdu8876.pdf 
N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench MOSFET 30V, 73A, 8.2m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 10m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been o
9.9. Size:129K onsemi
fdd8870 fdu8870.pdf 
September 2004 FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been o
9.10. Size:400K onsemi
fdd8878 fdu8878.pdf 
0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim
Другие IGBT... FDU8782, FDU8796, FDU8796F071, FDU8870, FDU8874, FDU8876, FDU8878, FDU8880, 4N60, FDU8896, FDV301ND87Z, FDV301NNB9V005, FDV302PD87Z, FDV302PNB8V001, FDV303NNB9U008, FDV304PD87Z, FDV304PNB8U003
