All MOSFET. FDV304PNB8U003 Datasheet

 

FDV304PNB8U003 Datasheet and Replacement


   Type Designator: FDV304PNB8U003
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: SOT-23
 

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FDV304PNB8U003 Datasheet (PDF)

 7.1. Size:46K  fairchild semi
 fdv304p d87z fdv304p nb8u003.pdf pdf_icon

FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transistors isproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.2. Size:63K  fairchild semi
 fdv304p.pdf pdf_icon

FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transistors isproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.3. Size:67K  onsemi
 fdv304p.pdf pdf_icon

FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transistors isproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.4. Size:1509K  cn vbsemi
 fdv304p.pdf pdf_icon

FDV304PNB8U003

FDV304Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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Datasheet: FDU8882 , FDU8896 , FDV301ND87Z , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , 7N60 , FDW252P , FDW254P , FDW254PZ , FDW256P , FDW258P , FDW262P , FDW264P , FDW6923 .

History: 2N60L-TA3-T | STN1NK60Z | UP672

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