Справочник MOSFET. FDV304PNB8U003

 

FDV304PNB8U003 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDV304PNB8U003
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.46 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 34 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для FDV304PNB8U003

 

 

FDV304PNB8U003 Datasheet (PDF)

 7.1. Size:46K  fairchild semi
 fdv304p d87z fdv304p nb8u003.pdf

FDV304PNB8U003 FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transistors isproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.2. Size:63K  fairchild semi
 fdv304p.pdf

FDV304PNB8U003 FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transistors isproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.3. Size:67K  onsemi
 fdv304p.pdf

FDV304PNB8U003 FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transistors isproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.4. Size:1509K  cn vbsemi
 fdv304p.pdf

FDV304PNB8U003 FDV304PNB8U003

FDV304Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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