FDV304PNB8U003. Аналоги и основные параметры

Наименование производителя: FDV304PNB8U003

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.46 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 34 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm

Тип корпуса: SOT-23

Аналог (замена) для FDV304PNB8U003

- подборⓘ MOSFET транзистора по параметрам

 

FDV304PNB8U003 даташит

 7.1. Size:46K  fairchild semi
 fdv304p d87z fdv304p nb8u003.pdf pdf_icon

FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.2. Size:63K  fairchild semi
 fdv304p.pdf pdf_icon

FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.3. Size:67K  onsemi
 fdv304p.pdf pdf_icon

FDV304PNB8U003

August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.1 @ VGS = -4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 1.5 @ VGS= -2.7 V. on-state resi

 7.4. Size:1509K  cn vbsemi
 fdv304p.pdf pdf_icon

FDV304PNB8U003

FDV304P www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

ПОКАЗАТЬ ЕЩЁ

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