FDW252P MOSFET Datasheet: P-Ch, 20V, 8.8A. Full specification with pinout and replacement list

FDW252P Specs and Replacement

   Type Designator: FDW252P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1035 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TSSOP-8

FDW252P substitution

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FDW252P datasheet

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July 2008 FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 8.8 A, 20 V. RDS(ON) = 0.0125 @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 0.018 @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications w... See More ⇒

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July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V... See More ⇒

9.2. Size:159K fairchild semi
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June 2008 FDW254P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 ... See More ⇒

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July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V... See More ⇒