FDW252P
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDW252P
Marking Code: 252P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 8.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 1035
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125
Ohm
Package:
TSSOP-8
FDW252P
Datasheet (PDF)
..1. Size:286K fairchild semi
fdw252p.pdf
July 2008FDW252PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is a rugged 8.8 A, 20 V. RDS(ON) = 0.0125 @ VGS = 4.5 Vgate version of Fairchild Semiconductors advanced RDS(ON) = 0.018 @ VGS = 2.5 VPowerTrench process. It has been optimized for powermanagement applications w
9.1. Size:209K fairchild semi
fdw254pz.pdf
July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V
9.2. Size:159K fairchild semi
fdw254p.pdf
June 2008FDW254PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 Vgate version of Fairchild Semiconductors advancedRDS(ON) = 15 m @ VGS = 2.5 VPowerTrench process. It has been optimized for powerRDS(ON) = 21.5 m @ VGS = 1.8
9.3. Size:307K fairchild semi
fdw258p.pdf
July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V
9.4. Size:194K fairchild semi
fdw256p.pdf
July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave dri
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