FDZ202P MOSFET Datasheet: P-Ch, 20V, 5.5A. Full specification with pinout and replacement list

FDZ202P Specs and Replacement

Type Designator: FDZ202P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 258 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SSOT-6

FDZ202P substitution

- MOSFET ⓘ Cross-Reference Search

FDZ202P datasheet

..1. Size:167K fairchild semi
fdz202p.pdf pdf_icon

... See More ⇒

9.1. Size:217K fairchild semi
fdz206p.pdf pdf_icon

February 2006 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced 2.5V specified 13 A, 20 V. rDS(on) = 9.5 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 14.5 m @ VGS = 2.5 V packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA M... See More ⇒

9.2. Size:193K fairchild semi
fdz208p.pdf pdf_icon

February 2006 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced 30 Volt P-Channel 12.5 A, 30 V. rDS(on) = 10.5 m @ VGS = 10 V Trench II Process with 25 Volts Vgs. Abs. Max Gate rDS(on) = 16.5 m @ VGS = 4.5 V Rating for the ultimate low rDS(on) Battery Protection MOSFET. Th... See More ⇒

9.3. Size:170K fairchild semi
fdz209n.pdf pdf_icon

May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced PowerTrench process 4 A, 60 V. RDS(ON) = 80 m @ VGS = 5 V with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging Occupies only 5 mm2 of PCB area only 55% of the ... See More ⇒