Справочник MOSFET. FDZ202P

 

FDZ202P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDZ202P
   Маркировка: 202P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 258 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: SSOT-6

 Аналог (замена) для FDZ202P

 

 

FDZ202P Datasheet (PDF)

 ..1. Size:167K  fairchild semi
 fdz202p.pdf

FDZ202P FDZ202P

January 2004 FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 5.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

 9.1. Size:217K  fairchild semi
 fdz206p.pdf

FDZ202P FDZ202P

February 2006 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 13 A, 20 V. rDS(on) = 9.5 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 14.5 m @ VGS = 2.5 V packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA M

 9.2. Size:193K  fairchild semi
 fdz208p.pdf

FDZ202P FDZ202P

February 2006 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 30 Volt P-Channel 12.5 A, 30 V. rDS(on) = 10.5 m @ VGS = 10 V Trench II Process with 25 Volts Vgs. Abs. Max Gate rDS(on) = 16.5 m @ VGS = 4.5 V Rating for the ultimate low rDS(on) Battery Protection MOSFET. Th

 9.3. Size:170K  fairchild semi
 fdz209n.pdf

FDZ202P FDZ202P

May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced PowerTrench process 4 A, 60 V. RDS(ON) = 80 m @ VGS = 5 V with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging Occupies only 5 mm2 of PCB area: only 55% of the

 9.4. Size:174K  fairchild semi
 fdz201n.pdf

FDZ202P FDZ202P

January 2004 FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 9 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V PowerTrench process with state-of-the-art BGARDS(ON) = 30 m @ VGS = 2.5 V packaging, the FDZ201N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies onl

 9.5. Size:166K  fairchild semi
 fdz204p.pdf

FDZ202P FDZ202P

January 2004 FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ204P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HY1506P

 

 
Back to Top