All MOSFET. FDZ299P Datasheet

 

FDZ299P MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDZ299P
   Marking Code: B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.6 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: BGA

 FDZ299P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDZ299P Datasheet (PDF)

 ..1. Size:208K  fairchild semi
 fdz299p.pdf

FDZ299P FDZ299P

February 2006 FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V RDS(ON) = 55 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 80 m @ VGS = 2.5 V packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

 9.1. Size:241K  fairchild semi
 fdz291p.pdf

FDZ299P FDZ299P

February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 1.5V specified 4.6 A, 20 V RDS(ON) = 40 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 60 m @ VGS = 2.5 Vpackaging, the FDZ291P minimizes both PCB space RDS(ON) = 160 m @ VGS = 1.5 V and

 9.2. Size:145K  fairchild semi
 fdz294n.pdf

FDZ299P FDZ299P

July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 34 m @ VGS = 2.5 V packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2

 9.3. Size:240K  fairchild semi
 fdz293p.pdf

FDZ299P FDZ299P

Feb 2006 FDZ293P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V rDS(on) = 46 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 72 m @ VGS = 2.5 V packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a

 9.4. Size:136K  fairchild semi
 fdz298n.pdf

FDZ299P FDZ299P

May 2005 FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 27 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 39 m @ VGS = 2.5 V packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2.

Datasheet: FDZ204P , FDZ206P , FDZ208P , FDZ209N , FDZ291P , FDZ293P , FDZ294N , FDZ298N , IRFP064N , FDZ3N513ZT , FDZ4670 , FDZ4670S , FDZ493P , FDZ5047N , FDZ7064AS , FDZ7064N , FDZ7296 .

History: IRFS7730-7PPBF | SFF80N20NUB | AOK22N50L | SFG170N10PF

 

 
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