All MOSFET. IRFR025 Datasheet

 

IRFR025 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR025

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: DPAK

IRFR025 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR025 Datasheet (PDF)

4.1. irfr024npbf.pdf Size:400K _upd

IRFR025
IRFR025

PD - 95066A IRFR024NPbF IRFU024NPbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform

4.2. irfr024pbf.pdf Size:1050K _upd

IRFR025
IRFR025

IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • Surface Mount (IRFR024, SiHFR024) RDS(on) ()VGS = 10 V 0.10 • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11 • Simple Driv

 4.3. irfr020pbf.pdf Size:1076K _upd

IRFR025
IRFR025

IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) (Ω)VGS = 10 V 0.10 • Dynamic dV/dt Rating Qg (Max.) (nC) 25 • Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 • Available in Tape and Reel • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration

4.4. irfr020.pdf Size:1391K _international_rectifier

IRFR025
IRFR025

PD- 97064 IRFR020 HEXFET Power MOSFET Dynamic dv/dt Rating Surface Mount (IRFR020) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements D S D G D-Pak IRFR020 GDS Absolute Maximum Ratings Gate Drain Source 11/16/05 Document Number: 90335 www.vishay.com 1 IRFR020 Document Number: 90335 www.vishay.com 2 IRFR020 Document Number:

 4.5. irfr024n.pdf Size:178K _international_rectifier

IRFR025
IRFR025

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on

4.6. irfr024.pdf Size:172K _international_rectifier

IRFR025
IRFR025

4.7. irfr024pbf irfu024pbf.pdf Size:1456K _international_rectifier

IRFR025
IRFR025

PD- 95236A IRFR024PbF IRFU024PbF Lead-Free Absolute Maximum Ratings 12/03/04 Document Number: 91264 www.vishay.com 1 IRFR/U024PbF Document Number: 91264 www.vishay.com 2 IRFR/U024PbF Document Number: 91264 www.vishay.com 3 IRFR/U024PbF Document Number: 91264 www.vishay.com 4 IRFR/U024PbF Document Number: 91264 www.vishay.com 5 IRFR/U024PbF Document Number: 91264 www.vis

4.8. irfr024a.pdf Size:495K _samsung

IRFR025
IRFR025

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07? Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

4.9. irfr022-24-25 irfu022-24-25.pdf Size:322K _samsung

IRFR025
IRFR025



4.10. irfr024 irfu024 sihfr024 sihfu024.pdf Size:1159K _vishay

IRFR025
IRFR025

IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Parall

4.11. irfr020 irfu020 sihfr020 sihfu020.pdf Size:1051K _vishay

IRFR025
IRFR025

IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) (?)VGS = 10 V 0.10 Dynamic dV/dt Rating Qg (Max.) (nC) 25 Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple

4.12. irfr024npbf.pdf Size:240K _inchange_semiconductor

IRFR025
IRFR025

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF ·FEATURES ·Drain Current I =17A@ T =25℃ D C ·Drain Source Voltage- : V = 55V(Min) DSS ·Static Drain-Source On-Resistance : R =75mΩ(Max)@V =10V DS(on) GS ·High density cell design for ultra low Rdson ·Fully characterized avalanche voltage and current ·Minimum Lot-to-Lot variations for robust device perform

4.13. irfr024n.pdf Size:241K _inchange_semiconductor

IRFR025
IRFR025

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

Datasheet: IRFR014 , IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRFR024N , 2N7000 , IRFR110 , IRFR110A , IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 .

 

 
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