IRFR025 Datasheet and Replacement

PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process Technology RDS(on) = 0.075 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

PD- 95236A IRFR024PbF IRFU024PbF Lead-Free Absolute Maximum Ratings 12/03/04 Document Number 91264 www.vishay.com 1 IRFR/U024PbF Document Number 91264 www.vishay.com 2 IRFR/U024PbF Document Number 91264 www.vishay.com 3 IRFR/U024PbF Document Number 91264 www.vishay.com 4 IRFR/U024PbF Document Number 91264 www.vishay.com 5 IRFR/U024PbF Document Number 91264 ww

PD - 95066A IRFR024NPbF IRFU024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF 4 www.irf.com IRFR/U024NPbF www.irf.com 5 IRFR/U024NPbF 6 www.irf.com IRFR/U024NPbF www.irf.com 7 IRFR/U024NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Inform

PD- 97064 IRFR020 HEXFET Power MOSFET Dynamic dv/dt Rating Surface Mount (IRFR020) Available in Tape & Reel Fast Switching Ease of Paralleling Simple Drive Requirements D S D G D-Pak IRFR020 GDS Absolute Maximum Ratings Gate Drain Source 11/16/05 Document Number 90335 www.vishay.com 1 IRFR020 Document Number 90335 www.vishay.com 2 IRFR020 D

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.050 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte

IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.10 Dynamic dV/dt Rating Qg (Max.) (nC) 25 Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration

IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11

IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Surface Mount (IRFR024, SiHFR024) RDS(on) ( )VGS = 10 V 0.10 Straight Lead (IRFU024, SiHFU024) Available in Tape and Reel Qg (Max.) (nC) 25 Fast Switching Qgs (nC) 5.8 Ease of Paralleling Qgd (nC) 11 Simple Driv

IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.10 Dynamic dV/dt Rating Qg (Max.) (nC) 25 Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 Available in Tape and Reel Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175 C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

IRFR024NTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mot

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRFR024NPBF FEATURES Drain Current I =17A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R =75m (Max)@V =10V DS(on) GS High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Minimum Lot-to-Lot variations for robust device perform