All MOSFET. FDZ7064N Datasheet

 

FDZ7064N MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDZ7064N
   Marking Code: 7064N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 13.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 522 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: BGA

 FDZ7064N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDZ7064N Datasheet (PDF)

 ..1. Size:186K  fairchild semi
 fdz7064n.pdf

FDZ7064N FDZ7064N

May 2004 FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchilds 30V PowerTrench process with 13.5 A, 30 V. RDS(ON) = 8.0 m @ VGS = 4.5 V state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA RDS(ON) = 7.0 m @ VGS = 10 V MOSFET embodies a breakthrough in packaging technol

 7.1. Size:596K  fairchild semi
 fdz7064as.pdf

FDZ7064N FDZ7064N

December 2004FDZ7064AS30V N-Channel PowerTrench SyncFET BGA MOSFETFeatures General Description 13.5 A, 30 V. RDS(ON) = 5.6 m @ VGS = 10 V This MOSFET is designed to replace a single MOSFET andRDS(ON) = 7.1 m @ VGS = 4.5 V parallel Schottky diode in synchronous DC:DC power supplies.Combining Fairchilds 30V PowerTrench SyncFET process with Occupies only 14 mm2 of

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