All MOSFET. IRFPE40PBF Datasheet

 

IRFPE40PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFPE40PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-247AC

 IRFPE40PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFPE40PBF Datasheet (PDF)

 ..1. Size:1490K  vishay
 irfpe40pbf.pdf

IRFPE40PBF IRFPE40PBF

IRFPE40, SiHFPE40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Lea

 7.1. Size:871K  international rectifier
 irfpe40.pdf

IRFPE40PBF IRFPE40PBF

PD - 94890IRFPE40PbF Lead-Free12/15/03Document Number: 91247 www.vishay.com1IRFPE40PbFDocument Number: 91247 www.vishay.com2IRFPE40PbFDocument Number: 91247 www.vishay.com3IRFPE40PbFDocument Number: 91247 www.vishay.com4IRFPE40PbFDocument Number: 91247 www.vishay.com5IRFPE40PbFDocument Number: 91247 www.vishay.com6IRFPE40PbFTO-247AC Package O

 7.2. Size:830K  vishay
 irfpe40.pdf

IRFPE40PBF IRFPE40PBF

IRFPE40www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 800 Repetitive avalanche ratedRDS(on) ()VGS = 10 V 2.0 Isolated central mounting holeQg (Max.) (nC) 130 Fast switchingQgs (nC) 17Qgd (nC) 72 Ease of parallelingConfiguration Single Simple drive requirementsD Material categorization: fo

 7.3. Size:1525K  vishay
 irfpe40 sihfpe40.pdf

IRFPE40PBF IRFPE40PBF

IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Complia

 7.4. Size:1530K  infineon
 irfpe40 sihfpe40.pdf

IRFPE40PBF IRFPE40PBF

IRFPE40, SiHFPE40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 130 COMPLIANT Fast SwitchingQgs (nC) 17Qgd (nC) 72 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Complia

 7.5. Size:252K  inchange semiconductor
 irfpe40.pdf

IRFPE40PBF IRFPE40PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFPE40FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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