IRFPF30PBF Datasheet and Replacement
Type Designator: IRFPF30PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: TO-247AC
IRFPF30PBF substitution
IRFPF30PBF Datasheet (PDF)
irfpf30pbf.pdf
PD- 95717IRFPF30PbF Lead-Free8/3/04Document Number: 91249 www.vishay.com1IRFPF30PbFDocument Number: 91249 www.vishay.com2IRFPF30PbFDocument Number: 91249 www.vishay.com3IRFPF30PbFDocument Number: 91249 www.vishay.com4IRFPF30PbFDocument Number: 91249 www.vishay.com5IRFPF30PbFDocument Number: 91249 www.vishay.com6IRFPF30PbFPeak Diode Recovery d
irfpf30pbf sihfpf30.pdf
IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
irfpf30 sihfpf30.pdf
IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
Datasheet: IRFPE30PBF , IRFPE32 , IRFPE40PBF , IRFPE42 , IRFPE50PBF , IRFPE52 , IRFPF20 , IRFPF22 , 2N7000 , IRFPF32 , IRFPF40PBF , IRFPF42 , IRFPF52 , IRFPG20 , IRFPG22 , IRFPG30PBF , IRFPG32 .
History: IPD800N06NG
Keywords - IRFPF30PBF MOSFET datasheet
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History: IPD800N06NG
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