IRFPF30PBF Specs and Replacement
Type Designator: IRFPF30PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: TO-247AC
IRFPF30PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFPF30PBF datasheet
irfpf30pbf.pdf
PD- 95717 IRFPF30PbF Lead-Free 8/3/04 Document Number 91249 www.vishay.com 1 IRFPF30PbF Document Number 91249 www.vishay.com 2 IRFPF30PbF Document Number 91249 www.vishay.com 3 IRFPF30PbF Document Number 91249 www.vishay.com 4 IRFPF30PbF Document Number 91249 www.vishay.com 5 IRFPF30PbF Document Number 91249 www.vishay.com 6 IRFPF30PbF Peak Diode Recovery d... See More ⇒
irfpf30pbf sihfpf30.pdf
IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian... See More ⇒
irfpf30 sihfpf30.pdf
IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 900 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.7 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 78 Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian... See More ⇒
Detailed specifications: IRFPE30PBF, IRFPE32, IRFPE40PBF, IRFPE42, IRFPE50PBF, IRFPE52, IRFPF20, IRFPF22, AON7408, IRFPF32, IRFPF40PBF, IRFPF42, IRFPF52, IRFPG20, IRFPG22, IRFPG30PBF, IRFPG32
Keywords - IRFPF30PBF MOSFET specs
IRFPF30PBF cross reference
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IRFPF30PBF replacement
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