IRFPG42
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFPG42
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Id|ⓘ - Maximum Drain Current: 3.9
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2
Ohm
Package:
TO-247AC
IRFPG42
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFPG42
Datasheet (PDF)
8.1. Size:860K international rectifier
irfpg40.pdf
PD - 94898IRFPG40PbF Lead-Free12/18/03Document Number: 91253 www.vishay.com1IRFPG40PbFDocument Number: 91253 www.vishay.com2IRFPG40PbFDocument Number: 91253 www.vishay.com3IRFPG40PbFDocument Number: 91253 www.vishay.com4IRFPG40PbFDocument Number: 91253 www.vishay.com5IRFPG40PbFDocument Number: 91253 www.vishay.com6IRFPG40PbFTO-247AC Package O
8.2. Size:1596K vishay
irfpg40 sihfpg40.pdf
IRFPG40, SiHFPG40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.5RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 120 COMPLIANT Fast SwitchingQgs (nC) 16Qgd (nC) 65 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
8.3. Size:1602K vishay
irfpg40pbf sihfpg40.pdf
IRFPG40, SiHFPG40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.5RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 120 COMPLIANT Fast SwitchingQgs (nC) 16Qgd (nC) 65 Ease of ParallelingConfiguration Single Simple Drive Requirements Complian
8.4. Size:236K inchange semiconductor
irfpg40.pdf
isc N-Channel MOSFET Transistor IRFPG40DESCRIPTIONDrain Current I = 4.3A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC Adapter, Battery Charge and SMPSABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL VALUE UNITARAME
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