All MOSFET. IRFR1205 Datasheet


IRFR1205 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR1205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 43.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: TO252AA

IRFR1205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRFR1205 Datasheet (PDF)

0.1. irfr1205pbf irfu1205pbf.pdf Size:393K _international_rectifier


PD - 95600A IRFR/U1205PbF • Lead-Free 1 12/9/04 IRFR/U1205PbF 2 IRFR/U1205PbF 3 IRFR/U1205PbF 4 IRFR/U1205PbF 5 IRFR/U1205PbF 6 IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Tr

0.2. irfr1205.pdf Size:144K _international_rectifier


PD - 91318B IRFR/U1205 HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027Ω Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This

 0.3. irfr1205.pdf Size:241K _inchange_semiconductor


isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

Datasheet: IRFR024 , IRFR024A , IRFR024N , IRFR025 , IRFR110 , IRFR110A , IRFR111 , IRFR120 , IRF1404 , IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 .


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