IRFR1205 datasheet, подбор замены

 ..1. Size:144K  international rectifier
 irfr1205.pdf 

PD - 91318B IRFR/U1205 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027 Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This

 ..2. Size:394K  international rectifier
 irfr1205pbf irfu1205pbf.pdf 

PD - 95600A IRFR/U1205PbF Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Tr

 ..3. Size:1338K  cn evvo
 irfr1205.pdf 

IRFR1205 Features l VDS (V) = 55V ID= 44A (VGS=10V) l 27m (VGS = 10V) l l RDS(ON) Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering technigues The straight lead version D is for through- hole mounting applications. Power dissipation le- vels up to 1.5 watts are possible in typical surface mount appli- cations. G l Ultra LowOn

 ..4. Size:241K  inchange semiconductor
 irfr1205.pdf 

isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205 FEATURES Static drain-source on-resistance RDS(on) 27m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

 0.1. Size:797K  cn vbsemi
 irfr1205tr.pdf 

IRFR1205TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 0.2. Size:1018K  cn minos
 irfr1205tr.pdf 

60V N-Channel Power MOSFET DESCRIPTION The IRFR1205TR uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A Schematic diagram RDS(ON)

 7.1. Size:369K  1
 irfr120 irfr121 irfu120 irfu121.pdf 

 7.2. Size:254K  international rectifier
 irfr120atm.pdf 

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

 7.3. Size:168K  international rectifier
 irfr120.pdf 

 7.4. Size:309K  international rectifier
 auirfu120z auirfr120z.pdf 

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

 7.5. Size:390K  international rectifier
 irfr120npbf irfu120npbf.pdf 

PD - 95067A IRFR/U120NPbF Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

 7.6. Size:318K  international rectifier
 irfr120zpbf irfu120zpbf.pdf 

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 190m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r

 7.7. Size:142K  international rectifier
 irfr120n.pdf 

PD - 91365B IRFR/U120N HEXFET Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21 Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. T

 7.8. Size:309K  international rectifier
 auirfr120ztrl.pdf 

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150m l 175 C Operating Temperature G l Fast Switching max. 190m l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

 7.9. Size:1326K  international rectifier
 irfr120pbf irfu120pbf.pdf 

PD- 95523A IRFR120PbF IRFU120PbF Lead-Free 12/03/04 Document Number 91266 www.vishay.com 1 IRFR/U120PbF Document Number 91266 www.vishay.com 2 IRFR/U120PbF Document Number 91266 www.vishay.com 3 IRFR/U120PbF Document Number 91266 www.vishay.com 4 IRFR/U120PbF Document Number 91266 www.vishay.com 5 IRFR/U120PbF Document Number 91266 www.vishay.com 6 IRFR/U12

 7.10. Size:256K  fairchild semi
 irfr120a irfu120a.pdf 

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

 7.11. Size:499K  samsung
 irfr120a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 7.12. Size:2013K  vishay
 irfr120pbf irfu120pbf sihfr120 sihfu120.pdf 

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q

 7.13. Size:1989K  vishay
 irfr120 irfu120 sihfr120 sihfu120.pdf 

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.27 Repetitive Avalanche Rated Qg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Q

 7.14. Size:1362K  cn vbsemi
 irfr120tr.pdf 

IRFR120TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 7.15. Size:764K  cn vbsemi
 irfr120ntrpbf.pdf 

IRFR120NTRPBF www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RAT

 7.16. Size:241K  inchange semiconductor
 irfr120z.pdf 

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120Z FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

 7.17. Size:241K  inchange semiconductor
 irfr120n.pdf 

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N FEATURES Static drain-source on-resistance RDS(on) 210m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat