IRFPG50PBF Datasheet and Replacement
Type Designator: IRFPG50PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-247AC
IRFPG50PBF substitution
IRFPG50PBF Datasheet (PDF)
irfpg50pbf.pdf

PD - 94806IRFPG50PbFHEXFET Power MOSFET Lead-Freewww.irf.com 110/31/03IRFPG50PbF2 www.irf.comIRFPG50PbFwww.irf.com 3IRFPG50PbF 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.com
irfpg50.pdf

PD - 9.543CIRFPG50HEXFET Power MOSFETwww.irf.com 110/29/97IRFPG502 www.irf.comIRFPG50www.irf.com 3IRFPG50 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.comDI, Drain Current (A
irfpg50 sihfpg50.pdf

IRFPG50, SiHFPG50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Isolated Central Mounting HoleQg (Max.) (nC) 190 Fast SwitchingQgs (nC) 23Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf

Datasheet: IRFPF42 , IRFPF52 , IRFPG20 , IRFPG22 , IRFPG30PBF , IRFPG32 , IRFPG40PBF , IRFPG42 , AON7410 , IRFPG52 , IRFPS29N60LPBF , IRFPS30N60KPBF , IRFPS35N50LPBF , IRFPS37N50APBF , IRFPS3810PBF , IRFPS3815PBF , IRFPS38N60L .
Keywords - IRFPG50PBF MOSFET datasheet
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