IRFPG50PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFPG50PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 190 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-247AC
IRFPG50PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFPG50PBF Datasheet (PDF)
irfpg50pbf.pdf
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PD - 94806IRFPG50PbFHEXFET Power MOSFET Lead-Freewww.irf.com 110/31/03IRFPG50PbF2 www.irf.comIRFPG50PbFwww.irf.com 3IRFPG50PbF 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.com
irfpg50.pdf
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PD - 9.543CIRFPG50HEXFET Power MOSFETwww.irf.com 110/29/97IRFPG502 www.irf.comIRFPG50www.irf.com 3IRFPG50 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.comDI, Drain Current (A
irfpg50 sihfpg50.pdf
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IRFPG50, SiHFPG50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Isolated Central Mounting HoleQg (Max.) (nC) 190 Fast SwitchingQgs (nC) 23Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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