All MOSFET. IRFR212 Datasheet

 

IRFR212 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR212

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 2.1 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2.4 Ohm

Package: DPAK

IRFR212 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR212 Datasheet (PDF)

4.1. irfr214pbf.pdf Size:859K _upd-mosfet

IRFR212
IRFR212

IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 2.0 • Surface Mount (IRFR214, SiHFR214) • Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas

4.2. irfr210pbf.pdf Size:821K _upd-mosfet

IRFR212
IRFR212

IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 1.5 • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas

 4.3. irfr210b irfu210b.pdf Size:724K _fairchild_semi

IRFR212
IRFR212

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast swi

4.4. irfr210b irfu210b 2.pdf Size:655K _fairchild_semi

IRFR212
IRFR212

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast swi

 4.5. irfr214b irfu214b.pdf Size:715K _fairchild_semi

IRFR212
IRFR212

November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast swi

4.6. irfr214.pdf Size:169K _international_rectifier

IRFR212
IRFR212

4.7. irfr214pbf irfu214pbf.pdf Size:1415K _international_rectifier

IRFR212
IRFR212

PD- 95384A IRFR214PbF IRFU214PbF Lead-Free 12/3/04 Document Number: 91269 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF Document Number: 91269 www.vishay.com 5 IRFR/U214PbF Document Number: 91269 www.vishay.com 6 IRFR/U214PbF

4.8. irfr210.pdf Size:171K _international_rectifier

IRFR212
IRFR212

4.9. irfr210pbf irfu210pbf.pdf Size:1298K _international_rectifier

IRFR212
IRFR212

PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number: 91268 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF Document Number: 91268 www.vishay.com 5 IRFR/U210PbF Document Number: 91268 www.vishay.com 6 IRFR/U210PbF

4.10. irfr210a.pdf Size:501K _samsung

IRFR212
IRFR212

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Low RDS(ON) : 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

4.11. irfr214a.pdf Size:510K _samsung

IRFR212
IRFR212

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

4.12. irfr214 irfu214 sihfr214 sihfu214.pdf Size:2021K _vishay

IRFR212
IRFR212

IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 2.0 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 Available in Tape and Ree

4.13. irfr210 irfu210 sihfr210 sihfu210.pdf Size:2066K _vishay

IRFR212
IRFR212

IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in Tape and Reel C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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