IRFR212 - аналоги, параметры транзистора - Справочник транзисторов

IRFR212 - Аналоги. Основные параметры

   Наименование производителя: IRFR212
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: TO252

Аналог (замена) для IRFR212

- подбор ⓘ MOSFET транзистора по параметрам

IRFR212 технические параметры

..1. Size:170K 1
irfr210 irfr212.pdf pdf_icon

8.1. Size:190K 1
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8.2. Size:169K international rectifier
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8.3. Size:1298K international rectifier
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PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number 91268 www.vishay.com 1 IRFR/U210PbF Document Number 91268 www.vishay.com 2 IRFR/U210PbF Document Number 91268 www.vishay.com 3 IRFR/U210PbF Document Number 91268 www.vishay.com 4 IRFR/U210PbF Document Number 91268 www.vishay.com 5 IRFR/U210PbF Document Number 91268 www.vishay.com 6 IRFR/U21

8.4. Size:171K international rectifier
irfr210.pdf pdf_icon

8.5. Size:1415K international rectifier
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PD- 95384A IRFR214PbF IRFU214PbF Lead-Free 12/3/04 Document Number 91269 www.vishay.com 1 IRFR/U214PbF Document Number 91269 www.vishay.com 2 IRFR/U214PbF Document Number 91269 www.vishay.com 3 IRFR/U214PbF Document Number 91269 www.vishay.com 4 IRFR/U214PbF Document Number 91269 www.vishay.com 5 IRFR/U214PbF Document Number 91269 www.vishay.com 6 IRFR/U214

8.6. Size:715K fairchild semi
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November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t

8.7. Size:655K fairchild semi
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November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t

8.8. Size:724K fairchild semi
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8.9. Size:501K samsung
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Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

8.10. Size:510K samsung
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Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 1.393 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

8.11. Size:821K vishay
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IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas

8.12. Size:2021K vishay
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IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 2.0 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 Available

8.13. Size:2066K vishay
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IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in

8.14. Size:859K vishay
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IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas

8.15. Size:287K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFR214 FEATURES Low drain-source on-resistance RDS(ON) 2.0 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Другие MOSFET... IRFR1205 , IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , 2N7000 , IRFR214 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFR230A .