IRFR212 - параметры транзистора MOSFET, его аналоги, datasheet

IRFR212 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRFR212
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: TO252

Аналог (замена) для IRFR212

- подбор MOSFET транзистора по параметрам

IRFR212 Datasheet (PDF)

..1. Size:170K 1
irfr210 irfr212.pdf pdf_icon

8.1. Size:190K 1
irfu214a irfr214a.pdf pdf_icon

8.2. Size:169K international rectifier
irfr214.pdf pdf_icon

8.3. Size:1298K international rectifier
irfr210pbf irfu210pbf.pdf pdf_icon

PD - 95068AIRFR210PbFIRFU210PbF Lead-Free12/9/04Document Number: 91268 www.vishay.com1IRFR/U210PbFDocument Number: 91268 www.vishay.com2IRFR/U210PbFDocument Number: 91268 www.vishay.com3IRFR/U210PbFDocument Number: 91268 www.vishay.com4IRFR/U210PbFDocument Number: 91268 www.vishay.com5IRFR/U210PbFDocument Number: 91268 www.vishay.com6IRFR/U21

8.4. Size:171K international rectifier
irfr210.pdf pdf_icon

8.5. Size:1415K international rectifier
irfr214pbf irfu214pbf.pdf pdf_icon

PD- 95384AIRFR214PbFIRFU214PbF Lead-Free12/3/04Document Number: 91269 www.vishay.com1IRFR/U214PbFDocument Number: 91269 www.vishay.com2IRFR/U214PbFDocument Number: 91269 www.vishay.com3IRFR/U214PbFDocument Number: 91269 www.vishay.com4IRFR/U214PbFDocument Number: 91269 www.vishay.com5IRFR/U214PbFDocument Number: 91269 www.vishay.com6IRFR/U214

8.6. Size:715K fairchild semi
irfr214b irfu214b.pdf pdf_icon

November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t

8.7. Size:655K fairchild semi
irfr210b irfu210b 2.pdf pdf_icon

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

8.8. Size:724K fairchild semi
irfr210b irfu210b.pdf pdf_icon

8.9. Size:501K samsung
irfr210a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

8.10. Size:510K samsung
irfr214a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

8.11. Size:821K vishay
irfr210pbf irfu210pbf sihfr210 sihfu210.pdf pdf_icon

IRFR210, IRFU210, SiHFR210, SiHFU210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210)Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas

8.12. Size:2021K vishay
irfr214 irfu214 sihfr214 sihfu214.pdf pdf_icon

IRFR214, IRFU214, SiHFR214, SiHFU214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 2.0 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210)Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210)Qgd (nC) 4.5 Available

8.13. Size:2066K vishay
irfr210 irfu210 sihfr210 sihfu210.pdf pdf_icon

IRFR210, IRFU210, SiHFR210, SiHFU210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 1.5 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210)Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210)Qgd (nC) 4.5 Available in

8.14. Size:859K vishay
irfr214pbf irfu214pbf sihfr214 sihfu214.pdf pdf_icon

IRFR214, IRFU214, SiHFR214, SiHFU214www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214)Qg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas

8.15. Size:287K inchange semiconductor
irfr214.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFR214FEATURESLow drain-source on-resistance:RDS(ON) 2.0 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .