ZVN4525E6TC Datasheet and Replacement
Type Designator: ZVN4525E6TC
Marking Code: N52
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id| ⓘ - Maximum Drain Current: 0.23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 2.6 nC
tr ⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: SOT23-6
ZVN4525E6TC substitution
ZVN4525E6TC Datasheet (PDF)
zvn4525e6ta zvn4525e6tc.pdf

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
zvn4525e6.pdf

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
zvn4525g.pdf

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
zvn4525gta zvn4525gtc.pdf

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
Datasheet: ZVN4310GTC , ZVN4424ASTOA , ZVN4424ASTOB , ZVN4424C , ZVN4424GTA , ZVN4424GTC , ZVN4424ZTA , ZVN4525E6TA , 8205A , ZVN4525GTA , ZVN4525GTC , ZVN4525ZTA , ZVNL110ASTOA , ZVNL110ASTOB , ZVNL110ASTZ , ZVNL110GTA , ZVNL110GTC .
Keywords - ZVN4525E6TC MOSFET datasheet
ZVN4525E6TC cross reference
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