ZVN4525E6TC. Аналоги и основные параметры
Наименование производителя: ZVN4525E6TC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.23 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 1.7 ns
Cossⓘ - Выходная емкость: 11 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 8.5 Ohm
Тип корпуса: SOT23-6
Аналог (замена) для ZVN4525E6TC
- подборⓘ MOSFET транзистора по параметрам
ZVN4525E6TC даташит
zvn4525e6ta zvn4525e6tc.pdf
ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener
zvn4525e6.pdf
ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener
zvn4525g.pdf
ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
zvn4525gta zvn4525gtc.pdf
ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
Другие MOSFET... ZVN4310GTC , ZVN4424ASTOA , ZVN4424ASTOB , ZVN4424C , ZVN4424GTA , ZVN4424GTC , ZVN4424ZTA , ZVN4525E6TA , IRFP260 , ZVN4525GTA , ZVN4525GTC , ZVN4525ZTA , ZVNL110ASTOA , ZVNL110ASTOB , ZVNL110ASTZ , ZVNL110GTA , ZVNL110GTC .
History: ZVN4424GTC | ZVP0545GTC
History: ZVN4424GTC | ZVP0545GTC
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Список транзисторов
Обновления
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