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ZVNL120C Spec and Replacement


   Type Designator: ZVNL120C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: TO-92

 ZVNL120C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZVNL120C Specs

 ..1. Size:26K  diodes
 zvnl120c.pdf pdf_icon

ZVNL120C

N-CHANNEL ENHANCEMENT ZVNL120C MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD D I I TI T I D E-Line T V TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I ... See More ⇒

 7.1. Size:52K  diodes
 zvnl120g.pdf pdf_icon

ZVNL120C

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL120G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis... See More ⇒

 7.2. Size:41K  diodes
 zvnl120astoa zvnl120astob zvnl120astz.pdf pdf_icon

ZVNL120C

N-CHANNEL ENHANCEMENT ZVNL120A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS VGS= 10V * RDS(on)=10 8V 6V * Low threshold 4V D APPLICATIONS G S * Telephone handsets E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 2V Drain-Source Voltage VDS 200 V 8 10 Continuous Drain Current at Tamb=25 C ID 180 mA Pulsed Drain... See More ⇒

 7.3. Size:40K  diodes
 zvnl120gta zvnl120gtc.pdf pdf_icon

ZVNL120C

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL120G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis... See More ⇒

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Detailed specifications: ZVNL110ASTOA , ZVNL110ASTOB , ZVNL110ASTZ , ZVNL110GTA , ZVNL110GTC , ZVNL120ASTOA , ZVNL120ASTOB , ZVNL120ASTZ , IRF530 , ZVNL120GTA , ZVNL120GTC , ZVP0545ASTOA , ZVP0545ASTOB , ZVP0545ASTZ , ZVP0545GTA , ZVP0545GTC , ZVP1320FTA .

Keywords - ZVNL120C MOSFET specs

 ZVNL120C cross reference
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