ZVNL120C Datasheet. Specs and Replacement

Type Designator: ZVNL120C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: TO-92

  📄📄 Copy 

ZVNL120C substitution

- MOSFET ⓘ Cross-Reference Search

 

ZVNL120C datasheet

 ..1. Size:26K  diodes
zvnl120c.pdf pdf_icon

ZVNL120C

N-CHANNEL ENHANCEMENT ZVNL120C MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD D I I TI T I D E-Line T V TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I ... See More ⇒

 7.1. Size:52K  diodes
zvnl120g.pdf pdf_icon

ZVNL120C

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL120G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis... See More ⇒

 7.2. Size:41K  diodes
zvnl120astoa zvnl120astob zvnl120astz.pdf pdf_icon

ZVNL120C

N-CHANNEL ENHANCEMENT ZVNL120A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS VGS= 10V * RDS(on)=10 8V 6V * Low threshold 4V D APPLICATIONS G S * Telephone handsets E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 2V Drain-Source Voltage VDS 200 V 8 10 Continuous Drain Current at Tamb=25 C ID 180 mA Pulsed Drain... See More ⇒

 7.3. Size:40K  diodes
zvnl120gta zvnl120gtc.pdf pdf_icon

ZVNL120C

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL120G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES D * VDS - 200V * RDS(ON) - 10 S PARTMARKING DETAIL - ZVNL120 D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis... See More ⇒

Detailed specifications: ZVNL110ASTOA, ZVNL110ASTOB, ZVNL110ASTZ, ZVNL110GTA, ZVNL110GTC, ZVNL120ASTOA, ZVNL120ASTOB, ZVNL120ASTZ, IRF530, ZVNL120GTA, ZVNL120GTC, ZVP0545ASTOA, ZVP0545ASTOB, ZVP0545ASTZ, ZVP0545GTA, ZVP0545GTC, ZVP1320FTA

Keywords - ZVNL120C MOSFET specs

 ZVNL120C cross reference

 ZVNL120C equivalent finder

 ZVNL120C pdf lookup

 ZVNL120C substitution

 ZVNL120C replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility