ZVP2110ASTOA Datasheet and Replacement
Type Designator: ZVP2110ASTOA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-92
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ZVP2110ASTOA Datasheet (PDF)
zvp2110astoa zvp2110astz.pdf
P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis
zvp2110a.pdf
P-CHANNEL ENHANCEMENT0CZVP2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=8D G SE-LineTO92 CompatiblebleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITNITDrain-Source Voltage VDS -100 VVContinuous Drain Current at Tamb=25C ID -230 mAmAPulsed Drain Current IDM -3 AAGate Source Voltage VGS 20 VVPower Dis
zvp2110g.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T
zvp2110gta zvp2110gtc.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP2110GMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD V D V 8D V V T T V VS V 8VD T I D T I V VG VABSOLUTE MAXIMUM RATINGS. V V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T
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History: ST3400SRG | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL | WMM07N65C4 | TPCA8047-H
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History: ST3400SRG | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL | WMM07N65C4 | TPCA8047-H
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