All MOSFET. IRFR222 Datasheet

 

IRFR222 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR222

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 3.8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: DPAK

IRFR222 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR222 Datasheet (PDF)

8.1. irfr220-01.pdf Size:266K _philips

IRFR222
IRFR222

IRFR220 N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode p

8.2. irfr220btm fp001.pdf Size:705K _fairchild_semi

IRFR222
IRFR222

November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 8.3. irfr220npbf irfu220npbf.pdf Size:224K _international_rectifier

IRFR222
IRFR222

PD- 95063A IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max (mΩ) ID l High frequency DC-DC converters 200V 600 5.0A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche V

8.4. irfr224.pdf Size:175K _international_rectifier

IRFR222
IRFR222



 8.5. irfr220pbf irfu220pbf.pdf Size:1880K _international_rectifier

IRFR222
IRFR222

PD - 95069A IRFR220PbF IRFU220PbF • Lead-Free 12/14/04 Document Number: 91270 www.vishay.com 1 IRFR/U220PbF Document Number: 91270 www.vishay.com 2 IRFR/U220PbF Document Number: 91270 www.vishay.com 3 IRFR/U220PbF Document Number: 91270 www.vishay.com 4 IRFR/U220PbF Document Number: 91270 www.vishay.com 5 IRFR/U220PbF Document Number: 91270 www.vishay.com 6 IRFR/U2

8.6. irfr220.pdf Size:173K _international_rectifier

IRFR222
IRFR222



8.7. irfr224pbf irfu224pbf.pdf Size:523K _international_rectifier

IRFR222
IRFR222

PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free 12/03/04 Document Number: 91271 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF Document Number: 91271 www.vishay.com 5 IRFR/U224PbF Document Number: 91271 www.vishay.com 6 IRFR/U22

8.8. irfr220n.pdf Size:132K _international_rectifier

IRFR222
IRFR222

PD- 94048 IRFR220N SMPS MOSFET IRFU220N HEXFET® Power MOSFET Applications VDSS RDS(on) max (mΩ) ID High frequency DC-DC converters 200V 600 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR22ON IRFU220

8.9. irfr220a.pdf Size:496K _samsung

IRFR222
IRFR222

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

8.10. irfr224a.pdf Size:509K _samsung

IRFR222
IRFR222

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Low RDS(ON) : 0.742 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

8.11. irfr220 irfu220 sihfr220 sihfu220.pdf Size:1537K _vishay

IRFR222
IRFR222

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.80 • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 • Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 • Available in T

8.12. irfr220pbf irfu220pbf sihfr220 sihfu220.pdf Size:797K _vishay

IRFR222
IRFR222

IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt rating VDS (V) 200 • Repetitive avalanche rated RDS(on) (Ω)VGS = 10 V 0.80 • Surface mount (IRFR220, SiHFR220) • Straight lead (IRFU220, SiHFU220) Qg (Max.) (nC) 14 • Available in tape and reel Qgs (nC) 3.0 Available • Fast switching Qgd (nC) 7

8.13. irfr224pbf irfu224pbf sihfr224 sihfu224.pdf Size:351K _vishay

IRFR222
IRFR222

IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 1.1 • Surface Mount (IRFR224, SiHFR224) Qg (Max.) (nC) 14 • Straight Lead (IRFU224, SiHFU224) Qgs (nC) 2.7 Qgd (nC) 7.8 • Available in Tape and Reel Configuration Single •

8.14. irfr224 irfu224 sihfr224 sihfu224.pdf Size:938K _vishay

IRFR222
IRFR222

IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 1.1 • Repetitive Avalanche Rated Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel

8.15. irfr220 irfu220 sihfr220 sihfu220 2.pdf Size:1442K _vishay

IRFR222
IRFR222

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.80 RoHS* • Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT • Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 • Available in Tape and Reel Qgd (nC) 7.9 Configuration Si

8.16. irfr220n.pdf Size:242K _inchange_semiconductor

IRFR222
IRFR222

isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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