IRFR222 Datasheet. Specs and Replacement
Type Designator: IRFR222 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
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IRFR222 datasheet
8.2. Size:256K 1
irfu220a irfr220a.pdf 
IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒
8.3. Size:90K 1
irfr220.pdf
IRFR220, IRFU220 Data Sheet January 2002 4.6A, 200V, 0.800 Ohm, N-Channel Power Features MOSFETs 4.6A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.800 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval... See More ⇒
8.4. Size:1880K international rectifier
irfr220pbf irfu220pbf.pdf
PD - 95069A IRFR220PbF IRFU220PbF Lead-Free 12/14/04 Document Number 91270 www.vishay.com 1 IRFR/U220PbF Document Number 91270 www.vishay.com 2 IRFR/U220PbF Document Number 91270 www.vishay.com 3 IRFR/U220PbF Document Number 91270 www.vishay.com 4 IRFR/U220PbF Document Number 91270 www.vishay.com 5 IRFR/U220PbF Document Number 91270 www.vishay.com 6 IRFR/U2... See More ⇒
8.6. Size:132K international rectifier
irfr220n.pdf
PD- 94048 IRFR220N SMPS MOSFET IRFU220N HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID High frequency DC-DC converters 200V 600 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR22ON IRFU220... See More ⇒
8.7. Size:523K international rectifier
irfr224pbf irfu224pbf.pdf
PD- 95237A IRFR224PbF IRFU224PbF Lead-Free 12/03/04 Document Number 91271 www.vishay.com 1 IRFR/U224PbF Document Number 91271 www.vishay.com 2 IRFR/U224PbF Document Number 91271 www.vishay.com 3 IRFR/U224PbF Document Number 91271 www.vishay.com 4 IRFR/U224PbF Document Number 91271 www.vishay.com 5 IRFR/U224PbF Document Number 91271 www.vishay.com 6 IRFR/U22... See More ⇒
8.9. Size:224K international rectifier
irfr220npbf irfu220npbf.pdf
PD- 95063A IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID l High frequency DC-DC converters 200V 600 5.0A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche V... See More ⇒
8.10. Size:266K philips
irfr220-01.pdf
IRFR220 N-channel enhancement mode field effect transistor Rev. 01 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode p... See More ⇒
8.11. Size:705K fairchild semi
irfr220btm fp001.pdf
November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to ... See More ⇒
8.12. Size:509K samsung
irfr224a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri... See More ⇒
8.13. Size:496K samsung
irfr220a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri... See More ⇒
8.14. Size:1442K vishay
irfr220 irfu220 sihfr220 sihfu220 2.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 7.9 Configuration Si... See More ⇒
8.15. Size:797K vishay
irfr220pbf irfu220pbf sihfr220 sihfu220.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 200 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220) Qg (Max.) (nC) 14 Available in tape and reel Qgs (nC) 3.0 Available Fast switching Qgd (nC) 7... See More ⇒
8.16. Size:938K vishay
irfr224 irfu224 sihfr224 sihfu224.pdf
IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.1 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel ... See More ⇒
8.17. Size:1537K vishay
irfr220 irfu220 sihfr220 sihfu220.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.80 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 Available in T... See More ⇒
8.18. Size:351K vishay
irfr224pbf irfu224pbf sihfr224 sihfu224.pdf
IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 Surface Mount (IRFR224, SiHFR224) Qg (Max.) (nC) 14 Straight Lead (IRFU224, SiHFU224) Qgs (nC) 2.7 Qgd (nC) 7.8 Available in Tape and Reel Configuration Single ... See More ⇒
8.19. Size:287K inchange semiconductor
irfr224.pdf
iscN-Channel MOSFET Transistor IRFR224 FEATURES Low drain-source on-resistance RDS(ON) 1.1 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.20. Size:242K inchange semiconductor
irfr220n.pdf
isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N FEATURES Static drain-source on-resistance RDS(on) 600m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒
8.21. Size:288K inchange semiconductor
irfr220.pdf
iscN-Channel MOSFET Transistor IRFR220 FEATURES Low drain-source on-resistance RDS(ON) 0.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: IRFR1N60A, IRFR210, IRFR210A, IRFR212, IRFR214, IRFR214A, IRFR220, IRFR220A, IRFP250N, IRFR224, IRFR224A, IRFR230A, IRFR310, IRFR310A, IRFR320, IRFR320A, IRFR3303
Keywords - IRFR222 MOSFET specs
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