All MOSFET. ZVP3306FTC Datasheet

 

ZVP3306FTC Datasheet and Replacement


   Type Designator: ZVP3306FTC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.09 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT-23
 

 ZVP3306FTC substitution

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ZVP3306FTC Datasheet (PDF)

 ..1. Size:89K  diodes
 zvp3306fta zvp3306ftc.pdf pdf_icon

ZVP3306FTC

SOT23 P-CHANNEL ENHANCEMENT6F ZVP3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 T V I VD DS V D V V T I D T I VG T T V V V 8VSOT23 VABSOLUTE MAXIMUM RATINGS. V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I

 5.1. Size:844K  cn vbsemi
 zvp3306fta.pdf pdf_icon

ZVP3306FTC

ZVP3306FTAwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo

 6.1. Size:115K  diodes
 zvp3306f.pdf pdf_icon

ZVP3306FTC

SOT23 P-CHANNEL ENHANCEMENT6F ZVP3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 T V I VD DS V D V V T I D T I VG T T V V V 8VSOT23 VABSOLUTE MAXIMUM RATINGS. V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I

 7.1. Size:65K  diodes
 zvp3306astoa zvp3306astob.pdf pdf_icon

ZVP3306FTC

P-CHANNEL ENHANCEMENTZVP3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD VGS=D -16V -14V-12VD-10VE-Line-9V-8V TO92 Compatible-7VABSOLUTE MAXIMUM RATINGS.-6V T V IT-5V-4.5VD i V I VD V8 -10 i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I

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