IRFR224A PDF and Equivalents Search

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Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri... See More ⇒

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PD- 95237A IRFR224PbF IRFU224PbF Lead-Free 12/03/04 Document Number 91271 www.vishay.com 1 IRFR/U224PbF Document Number 91271 www.vishay.com 2 IRFR/U224PbF Document Number 91271 www.vishay.com 3 IRFR/U224PbF Document Number 91271 www.vishay.com 4 IRFR/U224PbF Document Number 91271 www.vishay.com 5 IRFR/U224PbF Document Number 91271 www.vishay.com 6 IRFR/U22... See More ⇒

IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.1 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel ... See More ⇒

IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 Surface Mount (IRFR224, SiHFR224) Qg (Max.) (nC) 14 Straight Lead (IRFU224, SiHFU224) Qgs (nC) 2.7 Qgd (nC) 7.8 Available in Tape and Reel Configuration Single ... See More ⇒

iscN-Channel MOSFET Transistor IRFR224 FEATURES Low drain-source on-resistance RDS(ON) 1.1 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒