All MOSFET. ZXM61P03FTC Datasheet

 

ZXM61P03FTC MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXM61P03FTC
   Marking Code: P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 2.9 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT-23

 ZXM61P03FTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXM61P03FTC Datasheet (PDF)

 ..1. Size:269K  zetex
 zxm61p03ftc.pdf

ZXM61P03FTC ZXM61P03FTC

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

 4.1. Size:269K  zetex
 zxm61p03fta.pdf

ZXM61P03FTC ZXM61P03FTC

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

 5.1. Size:270K  diodes
 zxm61p03f.pdf

ZXM61P03FTC ZXM61P03FTC

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

 5.2. Size:92K  tysemi
 zxm61p03f.pdf

ZXM61P03FTC ZXM61P03FTC

Product specificationZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from TY utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Lo

Datasheet: ZXM41N10FTC , ZXM61N02FTA , ZXM61N02FTC , ZXM61N03FTA , ZXM61N03FTC , ZXM61P02FTA , ZXM61P02FTC , ZXM61P03FTA , IRFP460 , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC .

 

 
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