Справочник MOSFET. ZXM61P03FTC

 

ZXM61P03FTC Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM61P03FTC
   Маркировка: P03
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 4.8 nC
   tr ⓘ - Время нарастания: 2.9 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для ZXM61P03FTC

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXM61P03FTC Datasheet (PDF)

 ..1. Size:269K  zetex
 zxm61p03ftc.pdf pdf_icon

ZXM61P03FTC

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

 4.1. Size:269K  zetex
 zxm61p03fta.pdf pdf_icon

ZXM61P03FTC

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

 5.1. Size:270K  diodes
 zxm61p03f.pdf pdf_icon

ZXM61P03FTC

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

 5.2. Size:92K  tysemi
 zxm61p03f.pdf pdf_icon

ZXM61P03FTC

Product specificationZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from TY utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Lo

ПОКАЗАТЬ ЕЩЁ

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