ZXM61P03FTC - аналоги и даташиты транзистора

 

ZXM61P03FTC - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZXM61P03FTC
   Маркировка: P03
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 4.8 nC
   tr ⓘ - Время нарастания: 2.9 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для ZXM61P03FTC

 

ZXM61P03FTC Datasheet (PDF)

 ..1. Size:269K  zetex
 zxm61p03ftc.pdf pdf_icon

ZXM61P03FTC

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT

 4.1. Size:269K  zetex
 zxm61p03fta.pdf pdf_icon

ZXM61P03FTC

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT

 5.1. Size:270K  diodes
 zxm61p03f.pdf pdf_icon

ZXM61P03FTC

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT

 5.2. Size:92K  tysemi
 zxm61p03f.pdf pdf_icon

ZXM61P03FTC

Product specification ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Lo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXM41N10FTC , ZXM61N02FTA , ZXM61N02FTC , ZXM61N03FTA , ZXM61N03FTC , ZXM61P02FTA , ZXM61P02FTC , ZXM61P03FTA , IRFP460 , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC .

 

 
Back to Top

 


 
.