ZXM62N03E6TA MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXM62N03E6TA
Marking Code: 2N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Qgⓘ - Total Gate Charge: 9.6 nC
trⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-23-6
ZXM62N03E6TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXM62N03E6TA Datasheet (PDF)
zxm62n03e6ta.pdf
ZXM62N03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.11 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r
zxm62n03g.pdf
ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist
zxm62n03gta.pdf
ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist
zxm62n02e6.pdf
ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r
zxm62n02e6 2n02sot23-6.pdf
ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r
zxm62n02e6ta.pdf
ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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