ZXM62N03E6TA - аналоги и даташиты транзистора

 

ZXM62N03E6TA - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZXM62N03E6TA
   Маркировка: 2N03
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Qg ⓘ - Общий заряд затвора: 9.6 nC
   tr ⓘ - Время нарастания: 5.6 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SOT-23-6

 Аналог (замена) для ZXM62N03E6TA

 

ZXM62N03E6TA Datasheet (PDF)

 ..1. Size:147K  zetex
 zxm62n03e6ta.pdf pdf_icon

ZXM62N03E6TA

ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.11 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r

 6.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N03E6TA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist

 6.2. Size:150K  zetex
 zxm62n03gta.pdf pdf_icon

ZXM62N03E6TA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist

 7.1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N03E6TA

ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r

ПОКАЗАТЬ ЕЩЁ

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History: NTMSD3P102R2

 

 
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