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ZXM62N03GTA Spec and Replacement


   Type Designator: ZXM62N03GTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-223

 ZXM62N03GTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXM62N03GTA Specs

 ..1. Size:150K  zetex
 zxm62n03gta.pdf pdf_icon

ZXM62N03GTA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist... See More ⇒

 5.1. Size:152K  diodes
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ZXM62N03GTA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist... See More ⇒

 6.1. Size:147K  zetex
 zxm62n03e6ta.pdf pdf_icon

ZXM62N03GTA

ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.11 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r... See More ⇒

 7.1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N03GTA

ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r... See More ⇒

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Detailed specifications: ZXM61N03FTA , ZXM61N03FTC , ZXM61P02FTA , ZXM61P02FTC , ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA , IRF1404 , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , ZXM64N02XTC , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC .

History: NTMS4816NR2G

Keywords - ZXM62N03GTA MOSFET specs

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