Справочник MOSFET. ZXM62N03GTA

 

ZXM62N03GTA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM62N03GTA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.6 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SOT-223
     - подбор MOSFET транзистора по параметрам

 

ZXM62N03GTA Datasheet (PDF)

 ..1. Size:150K  zetex
 zxm62n03gta.pdf pdf_icon

ZXM62N03GTA

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

 5.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N03GTA

ZXM62N03G30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V: RDS(on) = 0.11 : ID = 4.7ADESCRIPTIONThis new generation of High Density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resist

 6.1. Size:147K  zetex
 zxm62n03e6ta.pdf pdf_icon

ZXM62N03GTA

ZXM62N03E630V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.11 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

 7.1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N03GTA

ZXM62N02E620V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R = 0.1 ; I =3.2A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low on-r

ПОКАЗАТЬ ЕЩЁ

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History: IXTA32P20T | SDF320JDA | 2SK2294 | TF2302 | DMT6009LCT | PMN30UNE | PHB152NQ03LTA

 

 
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