ZXM62N03GTA datasheet, аналоги, основные параметры

Наименование производителя: ZXM62N03GTA  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.6 ns

Cossⓘ - Выходная емкость: 90 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: SOT-223

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Аналог (замена) для ZXM62N03GTA

- подборⓘ MOSFET транзистора по параметрам

 

ZXM62N03GTA даташит

 ..1. Size:150K  zetex
 zxm62n03gta.pdf pdf_icon

ZXM62N03GTA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist

 5.1. Size:152K  diodes
 zxm62n03g.pdf pdf_icon

ZXM62N03GTA

ZXM62N03G 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V RDS(on) = 0.11 ID = 4.7A DESCRIPTION This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resist

 6.1. Size:147K  zetex
 zxm62n03e6ta.pdf pdf_icon

ZXM62N03GTA

ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.11 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r

 7.1. Size:186K  diodes
 zxm62n02e6.pdf pdf_icon

ZXM62N03GTA

ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R = 0.1 ; I =3.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-r

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