All MOSFET. ZXM62P03E6TA Datasheet

 

ZXM62P03E6TA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXM62P03E6TA
   Marking Code: 2P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-23-6

 ZXM62P03E6TA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXM62P03E6TA Datasheet (PDF)

 ..1. Size:285K  zetex
 zxm62p03e6ta.pdf

ZXM62P03E6TA ZXM62P03E6TA

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance

 4.1. Size:281K  diodes
 zxm62p03e6.pdf

ZXM62P03E6TA ZXM62P03E6TA

ZXM62P03E630V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistance

 6.1. Size:286K  zetex
 zxm62p03gta.pdf

ZXM62P03E6TA ZXM62P03E6TA

ZXM62P03G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistance

 7.1. Size:178K  diodes
 zxm62p02e6.pdf

ZXM62P03E6TA ZXM62P03E6TA

ZXM62P02E620V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.20 ; I =-2.3A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low o

 7.2. Size:176K  zetex
 zxm62p02e6ta.pdf

ZXM62P03E6TA ZXM62P03E6TA

ZXM62P02E620V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.20 ; I =-2.3A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23-6FEATURES Low o

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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