ZXM62P03E6TA - аналоги и даташиты транзистора

 

ZXM62P03E6TA - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ZXM62P03E6TA
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.4 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: SOT-23-6

 Аналог (замена) для ZXM62P03E6TA

 

ZXM62P03E6TA Datasheet (PDF)

 ..1. Size:285K  zetex
 zxm62p03e6ta.pdf pdf_icon

ZXM62P03E6TA

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance

 4.1. Size:281K  diodes
 zxm62p03e6.pdf pdf_icon

ZXM62P03E6TA

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance

 6.1. Size:286K  zetex
 zxm62p03gta.pdf pdf_icon

ZXM62P03E6TA

ZXM62P03G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V RDS(on) = 0.15 ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance

 7.1. Size:178K  diodes
 zxm62p02e6.pdf pdf_icon

ZXM62P03E6TA

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low o

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History: DMG7410SFG

 

 
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