IRFR320A Specs and Replacement

Type Designator: IRFR320A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO252

IRFR320A substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFR320A datasheet

 ..1. Size:211K  1
irfu320a irfr320a.pdf pdf_icon

IRFR320A

... See More ⇒

 ..2. Size:503K  samsung
irfr320a.pdf pdf_icon

IRFR320A

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V (Typ.) Lower RDS(ON) 1.408 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

 7.1. Size:177K  international rectifier
irfr320.pdf pdf_icon

IRFR320A

... See More ⇒

 7.2. Size:1849K  international rectifier
irfr320pbf irfu320pbf.pdf pdf_icon

IRFR320A

PD-95013A IRFR320PbF IRFU320PbF Lead-Free 12/13/04 Document Number 91273 www.vishay.com 1 IRFR/U320PbF Document Number 91273 www.vishay.com 2 IRFR/U320PbF Document Number 91273 www.vishay.com 3 IRFR/U320PbF Document Number 91273 www.vishay.com 4 IRFR/U320PbF Document Number 91273 www.vishay.com 5 IRFR/U320PbF Document Number 91273 www.vishay.com 6 IRFR/U320... See More ⇒

Detailed specifications: IRFR220A, IRFR222, IRFR224, IRFR224A, IRFR230A, IRFR310, IRFR310A, IRFR320, IRF4905, IRFR3303, IRFR3910, IRFR410, IRFR4105, IRFR411, IRFR420, IRFR420A, IRFR5305

Keywords - IRFR320A MOSFET specs

 IRFR320A cross reference

 IRFR320A equivalent finder

 IRFR320A pdf lookup

 IRFR320A substitution

 IRFR320A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility